I2304DDS-T1-GE3
Payment:
Delivery:

I2304DDS-T1-GE3 , Vishay / Siliconix

Производитель: Vishay / Siliconix
Mfr.Part #: SI2304DDS-T1-GE3
Пакет: SOT-23-3
RoHS:
Техническая спецификация:

PDF For SI2304DDS-T1-GE3

ECAD:
Описание:
MOSFET 30V Vds 20V Vgs SOT-23
Tips: the prices and stock are available, please place order directly.
  • Количество Цена за единицу
  • 5+ $0.08712
  • 50+ $0.07128
  • 150+ $0.06345
  • 500+ $0.05751
  • 3000+ $0.04698
  • 6000+ $0.04464

In Stock: 665

Ship Immediately
Количество Минимум 5
КУПИТЬ
Total

$0.4356

  • Product Details
  • Shopping Guide
  • FAQs
Технические характеристики продукта
Product Attribute Attribute Value
Manufacturer Vishay
Product Category MOSFET
RoHS
Forward Transconductance - Min 11 S
Rds On - Drain-Source Resistance 60 mOhms
Rise Time 12 ns
Fall Time 5 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 1.7 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case SOT-23-3
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Series SI2
Packaging Cut Tape or Reel
Part # Aliases SI2304DDS-GE3
Brand Vishay / Siliconix
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 10 V
Vgs Th - Gate-Source Threshold Voltage 1.2 V
Qg - Gate Charge 6.7 nC
Technology Si
Id - Continuous Drain Current 3.6 A
Vds - Drain-Source Breakdown Voltage 30 V
Typical Turn-Off Delay Time 10 ns
Typical Turn-On Delay Time 5 ns
Factory Pack Quantity 3000
Subcategory MOSFETs
Unit Weight 0.000282 oz
Tradename TrenchFET
Перекрестные ссылки
739881
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=739881&N=
$
5 0.08712
50 0.07128
150 0.06345
500 0.05751
3000 0.04698
6000 0.04464