Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Central Semiconductor |
| Product Category | Bipolar Transistors - BJT |
| RoHS |
|
| Maximum DC Collector Current | 200 mA |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 360 mW |
| Product Type | BJTs - Bipolar Transistors |
| Package / Case | TO-18 |
| Collector- Base Voltage VCBO | 40 V |
| Collector- Emitter Voltage VCEO Max | 15 V |
| Collector-Emitter Saturation Voltage | 500 mV |
| Emitter- Base Voltage VEBO | 4.5 V |
| Length | 5.84 mm |
| Width | 5.84 mm |
| Height | 5.33 mm |
| Minimum Operating Temperature | - 65 C |
| Maximum Operating Temperature | + 200 C |
| Gain Bandwidth Product FT | 500 MHz |
| Series | 2N2369 |
| Packaging | Bulk |
| Part # Aliases | 2N2369A PBFREE |
| Brand | Central Semiconductor |
| Configuration | Single |
| DC Collector/Base Gain Hfe Min | 20 at 100 mA, 1 V |
| DC Current Gain HFE Max | 120 |
| Transistor Polarity | NPN |
| Factory Pack Quantity | 2000 |
| Subcategory | Transistors |
