Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 15 mOhms, 30 mOhms |
| Rise Time | 16.5 ns, 17.1 ns |
| Fall Time | 5.6 ns, 40.4 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 1.2 W |
| Product Type | MOSFET |
| Number Of Channels | 2 Channel |
| Package / Case | SO-8 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | DMC3016 |
| Packaging | Cut Tape or Reel |
| Brand | Diodes Incorporated |
| Configuration | Dual |
| Transistor Polarity | N-Channel, P-Channel |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs Th - Gate-Source Threshold Voltage | 2.3 V |
| Qg - Gate Charge | 11.3 nC, 10.9 nC |
| Technology | Si |
| Id - Continuous Drain Current | 8.2 A, 6.2 A |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Typical Turn-Off Delay Time | 26.1 ns, 60.5 ns |
| Typical Turn-On Delay Time | 4.8 ns, 9.7 ns |
| Factory Pack Quantity | 2500 |
| Subcategory | MOSFETs |
| Unit Weight | 0.002610 oz |
