MN2450UFB4-7B
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MN2450UFB4-7B , Diodes Incorporated

Производитель: Diodes Incorporated
Mfr.Part #: DMN2450UFB4-7B
Пакет: X1-DFN1212-3
RoHS:
Техническая спецификация:

PDF For DMN2450UFB4-7B

ECAD:
Описание:
MOSFET MOSFET BVDSS: 8V~24V X2-DFN1006-3 T&R 10K
Tips: the prices and stock are available, please place order directly.
  • Количество Цена за единицу
  • 1+ $0.02660
  • 30+ $0.02565
  • 100+ $0.02470
  • 500+ $0.02280
  • 1000+ $0.02185
  • 2000+ $0.02128

In Stock: 3060

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Количество Минимум 1
КУПИТЬ
Total

$0.0266

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Технические характеристики продукта
Product Attribute Attribute Value
Manufacturer Diodes Incorporated
Product Category MOSFET
Rds On - Drain-Source Resistance 600 mOhms
Rise Time 2.4 ns
Fall Time 5.6 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 0.89 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case X1-DFN1212-3
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Packaging Cut Tape or Reel
Brand Diodes Incorporated
Configuration Single
Transistor Polarity N-Channel
Vgs - Gate-Source Voltage 12 V
Vgs Th - Gate-Source Threshold Voltage 450 mV
Qg - Gate Charge 0.7 nC
Technology Si
Id - Continuous Drain Current 900 mA
Vds - Drain-Source Breakdown Voltage 20 V
Typical Turn-Off Delay Time 20.9 ns
Typical Turn-On Delay Time 3.7 ns
Factory Pack Quantity 10000
Subcategory MOSFETs
Unit Weight 0.000176 oz
Перекрестные ссылки
790184
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=790184&N=
$
1 0.02660
30 0.02565
100 0.02470
500 0.02280
1000 0.02185
2000 0.02128