Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Product Category | MOSFET |
| RoHS |
|
| Product | MOSFET Small Signal |
| Forward Transconductance - Min | 180 mS |
| Rds On - Drain-Source Resistance | 3 Ohms |
| Rise Time | 7.9 ns |
| Fall Time | 15.2 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 350 mW |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | X2-DFN1006-3 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | DMN26 |
| Packaging | Cut Tape or Reel |
| Brand | Diodes Incorporated |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 4.5 V |
| Vgs Th - Gate-Source Threshold Voltage | 600 mV |
| Technology | Si |
| Id - Continuous Drain Current | 240 mA |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Typical Turn-Off Delay Time | 13.4 ns |
| Typical Turn-On Delay Time | 3.8 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.000028 oz |
