Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Product Category | Bipolar Transistors - BJT |
| RoHS |
|
| Maximum DC Collector Current | 3 A |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 1560 mW |
| Product Type | BJTs - Bipolar Transistors |
| Package / Case | DPAK-3 |
| Collector- Base Voltage VCBO | 100 V |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Collector-Emitter Saturation Voltage | 1.2 V |
| Emitter- Base Voltage VEBO | 5 V |
| Length | 6.8 mm |
| Width | 6.2 mm |
| Height | 2.4 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product FT | 3 MHz |
| Series | MJD31C |
| Packaging | Cut Tape or Reel |
| Brand | Diodes Incorporated |
| Configuration | Single |
| Continuous Collector Current | 3 A |
| DC Collector/Base Gain Hfe Min | 25 |
| DC Current Gain HFE Max | 40 at 3 A, 4 V |
| Transistor Polarity | NPN |
| Factory Pack Quantity | 2500 |
| Subcategory | Transistors |
| Unit Weight | 0.012346 oz |
