MJD32CQ-13
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MJD32CQ-13 , Diodes Incorporated

Производитель: Diodes Incorporated
Mfr.Part #: MJD32CQ-13
Пакет: TO-252-3
RoHS:
Техническая спецификация:

PDF For MJD32CQ-13

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Описание:
Bipolar Transistors - BJT Pwr Mid Perf Transistor
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  • Количество Цена за единицу
  • 30+ $0.32160
  • 100+ $0.24677

In Stock: 249

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Количество Минимум 30
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Total

$9.648

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Технические характеристики продукта
Product Attribute Attribute Value
Manufacturer Diodes Incorporated
Product Category Bipolar Transistors - BJT
Maximum DC Collector Current - 3 A
Mounting Style SMD/SMT
Pd - Power Dissipation 15 W
Product Type BJTs - Bipolar Transistors
Package / Case TO-252-3
Collector- Base Voltage VCBO - 100 V
Collector- Emitter Voltage VCEO Max - 100 V
Collector-Emitter Saturation Voltage - 1.2 V
Emitter- Base Voltage VEBO - 6 V
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Qualification AEC-Q101
Gain Bandwidth Product FT 3 MHz
Packaging Cut Tape or Reel
Brand Diodes Incorporated
Configuration Single
Continuous Collector Current - 3 A
DC Collector/Base Gain Hfe Min 10
DC Current Gain HFE Max 50
Transistor Polarity PNP
Technology Si
Factory Pack Quantity 2500
Subcategory Transistors
Перекрестные ссылки
713460
1155
/category/Semiconductors/Discrete-Semiconductors/Transistors/Bipolar-Transistors-BJT_1155?proid=713460&N=
$
30 0.32160
100 0.24677