MMDT5401Q-7-F
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MMDT5401Q-7-F , Diodes Incorporated

Производитель: Diodes Incorporated
Mfr.Part #: MMDT5401Q-7-F
Пакет: SOT-223-3
RoHS:
Техническая спецификация:

PDF For MMDT5401Q-7-F

ECAD:
Описание:
Bipolar Transistors - BJT SS Hi Voltage Transistor
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  • Количество Цена за единицу
  • 70+ $0.10409
  • 200+ $0.08491
  • 1500+ $0.07706
  • 3000+ $0.07219

In Stock: 3000

Ship Immediately
Количество Минимум 70
КУПИТЬ
Total

$7.2863

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Технические характеристики продукта
Product Attribute Attribute Value
Manufacturer Diodes Incorporated
Product Category Bipolar Transistors - BJT
Mounting Style SMD/SMT
Pd - Power Dissipation 3 W
Product Type BJTs - Bipolar Transistors
Package / Case SOT-223-3
Collector- Base Voltage VCBO - 160 V
Collector- Emitter Voltage VCEO Max - 150 V
Collector-Emitter Saturation Voltage - 0.5 V
Emitter- Base Voltage VEBO - 6 V
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Qualification AEC-Q101
Gain Bandwidth Product FT 150 MHz
Brand Diodes Incorporated
Configuration Single
Continuous Collector Current - 200 mA
DC Current Gain HFE Max 900
Transistor Polarity PNP
Technology Si
Factory Pack Quantity 3000
Subcategory Transistors
Перекрестные ссылки
812187
1155
/category/Semiconductors/Discrete-Semiconductors/Transistors/Bipolar-Transistors-BJT_1155?proid=812187&N=
$
70 0.10409
200 0.08491
1500 0.07706
3000 0.07219