Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | IXYS |
| Product Category | IGBT Transistors |
| RoHS |
|
| Maximum Gate Emitter Voltage | 25 V |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 625 W |
| Product Type | IGBT Transistors |
| Package / Case | TO-264-3 |
| Collector- Emitter Voltage VCEO Max | 3 kV |
| Collector-Emitter Saturation Voltage | 2.7 V |
| Length | 20.29 mm |
| Width | 5.31 mm |
| Height | 26.59 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Series | Very High Voltage |
| Packaging | Tube |
| Brand | IXYS |
| Configuration | Single |
| Continuous Collector Current At 25 C | 130 A |
| Continuous Collector Current Ic Max | 130 A |
| Gate-Emitter Leakage Current | +/- 200 nA |
| Technology | Si |
| Factory Pack Quantity | 25 |
| Subcategory | IGBTs |
| Unit Weight | 0.264555 oz |
| Tradename | BIMOSFET |
