Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | IXYS |
| Product Category | IGBT Transistors |
| RoHS |
|
| Maximum Gate Emitter Voltage | 20 V |
| Operating Temperature Range | - 55 C to + 150 C |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 625 W |
| Product Type | IGBT Transistors |
| Package / Case | SOT-227B-4 |
| Collector- Emitter Voltage VCEO Max | 1.7 kV |
| Collector-Emitter Saturation Voltage | 4.95 V |
| Length | 38.23 mm |
| Width | 25.42 mm |
| Height | 9.6 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Series | IXBN75N170 |
| Packaging | Tube |
| Brand | IXYS |
| Configuration | Single |
| Continuous Collector Current | 75 A |
| Continuous Collector Current At 25 C | 75 A |
| Continuous Collector Current Ic Max | 350 A |
| Gate-Emitter Leakage Current | 100 nA |
| Technology | Si |
| Factory Pack Quantity | 10 |
| Subcategory | IGBTs |
| Unit Weight | 1.058219 oz |
| Tradename | BIMOSFET |
