Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | IXYS |
| Product Category | MOSFET |
| RoHS |
|
| Type | PolarHV HiPerFET Power MOSFET |
| Forward Transconductance - Min | 14 S |
| Rds On - Drain-Source Resistance | 520 mOhms |
| Rise Time | 24 ns |
| Fall Time | 24 ns |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 500 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-247-3 |
| Length | 16.26 mm |
| Width | 5.3 mm |
| Height | 21.46 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | IXFH20N80 |
| Packaging | Tube |
| Brand | IXYS |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 30 V |
| Vgs Th - Gate-Source Threshold Voltage | 5 V |
| Qg - Gate Charge | 86 nC |
| Technology | Si |
| Id - Continuous Drain Current | 20 A |
| Vds - Drain-Source Breakdown Voltage | 800 V |
| Typical Turn-Off Delay Time | 85 ns |
| Typical Turn-On Delay Time | 30 ns |
| Factory Pack Quantity | 30 |
| Subcategory | MOSFETs |
| Unit Weight | 0.229281 oz |
| Tradename | HiPerFET |
