Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | IXYS |
| Product Category | IGBT Transistors |
| RoHS |
|
| Maximum Gate Emitter Voltage | 20 V |
| Operating Temperature Range | - 55 C to + 150 C |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 1 kW |
| Product Type | IGBT Transistors |
| Package / Case | TO-264-3 |
| Collector- Emitter Voltage VCEO Max | 300 V |
| Collector-Emitter Saturation Voltage | 1.15 V |
| Length | 20.29 mm |
| Width | 5.31 mm |
| Height | 26.59 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Series | IXGK400N30 |
| Packaging | Tube |
| Brand | IXYS |
| Configuration | Single |
| Continuous Collector Current | 400 A |
| Continuous Collector Current At 25 C | 400 A |
| Continuous Collector Current Ic Max | 1.2 kA |
| Gate-Emitter Leakage Current | 400 nA |
| Technology | Si |
| Factory Pack Quantity | 25 |
| Subcategory | IGBTs |
| Unit Weight | 0.352740 oz |
| Tradename | GenX3 |
