Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | IXYS |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 90 S |
| Rds On - Drain-Source Resistance | 2.4 mOhms |
| Rise Time | 28 ns |
| Fall Time | 23 ns |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 375 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Channel Mode | Enhancement |
| Series | Gen4 |
| Packaging | Tube |
| Brand | IXYS |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 15 V |
| Vgs Th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 182 nC |
| Technology | Si |
| Id - Continuous Drain Current | 270 A |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Typical Turn-Off Delay Time | 72 ns |
| Typical Turn-On Delay Time | 18 ns |
| Factory Pack Quantity | 50 |
| Subcategory | MOSFETs |
| Unit Weight | 0.063493 oz |
| Tradename | HiPerFET |
