F3415PBF
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F3415PBF , Infineon / IR

Производитель: Infineon / IR
Mfr.Part #: IRF3415PBF
Пакет: TO-220-3
RoHS:
Техническая спецификация:

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ECAD:
Описание:
MOSFET MOSFT 150V 43A 42mOhm 133.3nC
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Технические характеристики продукта
Product Attribute Attribute Value
Manufacturer Infineon
Product Category MOSFET
RoHS
Rds On - Drain-Source Resistance 42 mOhms
Mounting Style Through Hole
Pd - Power Dissipation 200 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case TO-220-3
Length 10 mm
Width 4.4 mm
Height 15.65 mm
Packaging Tube
Part # Aliases SP001564438
Brand Infineon / IR
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 20 V
Qg - Gate Charge 133.3 nC
Technology Si
Id - Continuous Drain Current 43 A
Vds - Drain-Source Breakdown Voltage 150 V
Factory Pack Quantity 1000
Subcategory MOSFETs
Unit Weight 0.211644 oz
Перекрестные ссылки
738082
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=738082&N=
$
1 0.60082