Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Infineon |
| Product Category | MOSFET |
| RoHS |
|
| Product | MOSFET Small Signal |
| Forward Transconductance - Min | 1.3 S |
| Rds On - Drain-Source Resistance | 250 mOhms |
| Rise Time | 9.5 ns |
| Fall Time | 4.8 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 540 mW |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | SOT-23-3 |
| Length | 2.9 mm |
| Width | 1.3 mm |
| Height | 1.1 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Packaging | Cut Tape or Reel |
| Part # Aliases | SP001552710 |
| Brand | Infineon / IR |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 12 V |
| Vgs Th - Gate-Source Threshold Voltage | 700 mV |
| Qg - Gate Charge | 2.6 nC |
| Technology | Si |
| Id - Continuous Drain Current | 1.2 A |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Typical Turn-Off Delay Time | 9.7 ns |
| Typical Turn-On Delay Time | 2.5 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.000282 oz |
