KY75N120CH3XKSA1
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KY75N120CH3XKSA1 , Infineon Technologies

Производитель: Infineon Technologies
Mfr.Part #: IKY75N120CH3XKSA1
Пакет: TO247-4-2
RoHS:
Техническая спецификация:

PDF For IKY75N120CH3XKSA1

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Описание:
IGBT Transistors
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  • Количество Цена за единицу
  • 1+ $20.57832
  • 10+ $19.83177
  • 30+ $18.53658
  • 100+ $17.40717

In Stock: 4

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Количество Минимум 1
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$20.57832

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Технические характеристики продукта
Product Attribute Attribute Value
Manufacturer Infineon
Product Category IGBT Transistors
RoHS
Maximum Gate Emitter Voltage 20 V
Mounting Style Through Hole
Pd - Power Dissipation 938 W
Product Type IGBT Transistors
Package / Case TO247-4-2
Collector- Emitter Voltage VCEO Max 1200 V
Collector-Emitter Saturation Voltage 2 V
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 175 C
Packaging Tube
Part # Aliases IKY75N120CH3 SP001465128
Brand Infineon Technologies
Configuration Single
Continuous Collector Current At 25 C 150 A
Continuous Collector Current Ic Max 150 A
Gate-Emitter Leakage Current 100 nA
Technology Si
Factory Pack Quantity 240
Subcategory IGBTs
Unit Weight 0.211644 oz
Перекрестные ссылки
718656
1156
/category/Semiconductors/Discrete-Semiconductors/Transistors/IGBT-Transistors_1156?proid=718656&N=
$
1 20.57832
10 19.83177
30 18.53658
100 17.40717