PB049NE7N3G
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PB049NE7N3G , Infineon Technologies

Производитель: Infineon Technologies
Mfr.Part #: IPB049NE7N3G
Пакет: PG-TO263
RoHS:
Техническая спецификация:

PDF For IPB049NE7N3G

ECAD:
Описание:
MOSFET PG-TO263
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  • Количество Цена за единицу
  • 1+ $3.50352
  • 30+ $3.33027

In Stock: 10

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Количество Минимум 1
КУПИТЬ
Total

$3.50352

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Технические характеристики продукта
Product Attribute Attribute Value
Manufacturer Infineon Technologies
Continuous Drain Current (Id) @ 25°C -
Rds On - Drain-Source Resistance -
Pd - Power Dissipation -
Package / Case PG-TO263
Packaging Tape & Reel (TR)
Transistor Polarity -
Vgs - Gate-Source Voltage -
Vds - Drain-Source Breakdown Voltage -
Перекрестные ссылки
4792733
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4792733&N=
$
1 3.50352
30 3.33027