Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Infineon |
| Product Category | MOSFET |
| RoHS |
|
| Type | OptiMOS 3 Power-Transistor |
| Forward Transconductance - Min | 57 S, 29 S |
| Rds On - Drain-Source Resistance | 20 mOhms |
| Rise Time | 11 ns |
| Fall Time | 6 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 150 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-263-3 |
| Length | 10 mm |
| Width | 9.25 mm |
| Height | 4.4 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Channel Mode | Enhancement |
| Series | OptiMOS 3 |
| Packaging | Cut Tape or Reel |
| Part # Aliases | IPB200N15N3GATMA1 IPB2N15N3GXT SP000414740 |
| Brand | Infineon Technologies |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs Th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 31 nC |
| Technology | Si |
| Id - Continuous Drain Current | 50 A |
| Vds - Drain-Source Breakdown Voltage | 150 V |
| Typical Turn-Off Delay Time | 23 ns |
| Typical Turn-On Delay Time | 14 ns |
| Factory Pack Quantity | 1000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.139332 oz |
| Tradename | OptiMOS |
