PP024N06N3 G
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PP024N06N3 G , Infineon Technologies

Производитель: Infineon Technologies
Mfr.Part #: IPP024N06N3 G
Пакет:
RoHS:
Техническая спецификация:

PDF For IPP024N06N3 G

ECAD:
Описание:
MOSFET N Channel 60V 120A(Tc) 4V @ 196uA 2.4mΩ @ 100A,10V PG-TO220-3 RoHS
Tips: the prices and stock are available, please place order directly.
  • Количество Цена за единицу
  • 1+ $2.96235
  • 10+ $2.59983
  • 50+ $2.38356
  • 100+ $2.16603
  • 500+ $2.06532
  • 1000+ $2.01969

In Stock: 121

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Количество Минимум 1
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Total

$2.96235

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Технические характеристики продукта
Product Attribute Attribute Value
Continuous Drain Current (Id) @ 25°C 120A(Tc)
Power Dissipation-Max (Ta=25°C) 250W(Tc)
Rds On - Drain-Source Resistance 2.4mΩ @ 100A,10V
Transistor Polarity N Channel
Vgs - Gate-Source Voltage 4V @ 196uA
Vds - Drain-Source Breakdown Voltage 60V
Перекрестные ссылки
5092297
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=5092297&N=
$
1 2.96235
10 2.59983
50 2.38356
100 2.16603
500 2.06532
1000 2.01969