PU80R1K4P7
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PU80R1K4P7 , Infineon Technologies

Производитель: Infineon Technologies
Mfr.Part #: IPU80R1K4P7
Пакет: PG-TO251-3
RoHS:
Техническая спецификация:

PDF For IPU80R1K4P7

ECAD:
Описание:
MOSFET PG-TO251-3 RoHS
Tips: the prices and stock are available, please place order directly.
  • Количество Цена за единицу
  • 1+ $2.35539
  • 10+ $2.04651
  • 30+ $1.85454
  • 100+ $1.58193
  • 500+ $1.49328
  • 1500+ $1.45431

In Stock: 20

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Количество Минимум 1
КУПИТЬ
Total

$2.35539

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Технические характеристики продукта
Product Attribute Attribute Value
Manufacturer Infineon Technologies
Continuous Drain Current (Id) @ 25°C -
Power Dissipation-Max (Ta=25°C) -
Rds On - Drain-Source Resistance -
Package / Case PG-TO251-3
Packaging Tube-packed
Transistor Polarity -
Vgs - Gate-Source Voltage -
Vds - Drain-Source Breakdown Voltage -
Перекрестные ссылки
4864093
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4864093&N=
$
1 2.35539
10 2.04651
30 1.85454
100 1.58193
500 1.49328
1500 1.45431