P2305LT1G
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P2305LT1G , Leshan Radio

Производитель: Leshan Radio
Mfr.Part #: LP2305LT1G
Пакет:
RoHS:
Техническая спецификация:

PDF For LP2305LT1G

ECAD:
Описание:
MOSFET P Trench 30V 4.2A 1.3V @ 250uA 70 mΩ @ 4.2A,10V SOT-23(SOT-23-3) RoHS
Tips: the prices and stock are available, please place order directly.
  • Количество Цена за единицу
  • 1+ $0.03096
  • 100+ $0.02890
  • 300+ $0.02684
  • 500+ $0.02477
  • 2000+ $0.02374
  • 5000+ $0.02312

In Stock: 891

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Количество Минимум 1
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Total

$0.03096

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Технические характеристики продукта
Product Attribute Attribute Value
Manufacturer Leshan Radio
Continuous Drain Current (Id) @ 25°C 4.2A
Power Dissipation-Max (Ta=25°C) 1.4W
Rds On - Drain-Source Resistance 70mΩ @ 4.2A,10V
Transistor Polarity P Channel
Vgs - Gate-Source Voltage 1.3V @ 250uA
Vds - Drain-Source Breakdown Voltage 30V
Перекрестные ссылки
4610964
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4610964&N=
$
1 0.03096
100 0.02890
300 0.02684
500 0.02477
2000 0.02374
5000 0.02312