Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Microchip |
| Product Category | Bipolar Transistors - BJT |
| RoHS |
|
| Maximum DC Collector Current | 800 mA |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 3 W |
| Product Type | BJTs - Bipolar Transistors |
| Package / Case | TO-39-3 |
| Collector- Base Voltage VCBO | 75 V |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Collector-Emitter Saturation Voltage | 0.3 V |
| Emitter- Base Voltage VEBO | 6 V |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 200 C |
| Packaging | Reel |
| Brand | Microchip / Microsemi |
| Configuration | Single |
| DC Collector/Base Gain Hfe Min | 50 at 100 uA, 10 V |
| DC Current Gain HFE Max | 325 at 1 mA, 10 V |
| Transistor Polarity | NPN |
| Technology | Si |
| Factory Pack Quantity | 100 |
| Subcategory | Transistors |
