Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Microchip |
| Product Category | MOSFET |
| RoHS |
|
| Type | FET |
| Rds On - Drain-Source Resistance | 4 Ohms |
| Rise Time | 10 ns |
| Fall Time | 30 ns |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 1 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-92-3 |
| Length | 5.21 mm |
| Width | 4.19 mm |
| Height | 5.33 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Packaging | Bulk |
| Brand | Microchip Technology |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Technology | Si |
| Id - Continuous Drain Current | 1.2 A |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Typical Turn-Off Delay Time | 50 ns |
| Typical Turn-On Delay Time | 10 ns |
| Factory Pack Quantity | 1000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.015873 oz |
