Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | ON Semiconductor |
| Product Category | MOSFET |
| RoHS |
|
| Type | MOSFET |
| Forward Transconductance - Min | 5.5 S |
| Rds On - Drain-Source Resistance | 1.9 Ohms |
| Rise Time | 100 ns |
| Fall Time | 60 ns |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 167 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Length | 10.67 mm |
| Width | 4.7 mm |
| Height | 16.3 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | FQP7N80C |
| Packaging | Tube |
| Part # Aliases | FQP7N80C_NL |
| Brand | ON Semiconductor / Fairchild |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 30 V |
| Technology | Si |
| Id - Continuous Drain Current | 6.6 A |
| Vds - Drain-Source Breakdown Voltage | 800 V |
| Typical Turn-Off Delay Time | 50 ns |
| Typical Turn-On Delay Time | 35 ns |
| Factory Pack Quantity | 1000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.063493 oz |
| Tradename | QFET |
