Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT |
| RoHS |
|
| Maximum DC Collector Current | - 2 A |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 1.3 W |
| Product Type | BJTs - Bipolar Transistors |
| Collector- Base Voltage VCBO | - 60 V |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Collector-Emitter Saturation Voltage | - 0.18 V |
| Emitter- Base Voltage VEBO | - 5 V |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product FT | 150 MHz |
| Series | 2SB1122 |
| Packaging | Cut Tape or Reel |
| Brand | ON Semiconductor |
| Configuration | Single |
| Continuous Collector Current | - 1 A |
| DC Collector/Base Gain Hfe Min | 140 |
| DC Current Gain HFE Max | 560 |
| Transistor Polarity | PNP |
| Factory Pack Quantity | 1000 |
| Subcategory | Transistors |
| Unit Weight | 0.001806 oz |
