BSV52LT1G
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BSV52LT1G , ON Semiconductor

Производитель: ON Semiconductor
Mfr.Part #: BSV52LT1G
Пакет: SOT-23-3
RoHS:
Техническая спецификация:

PDF For BSV52LT1G

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Описание:
Bipolar Transistors - BJT 100mA 12V Switching NPN
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Технические характеристики продукта
Product Attribute Attribute Value
Manufacturer ON Semiconductor
Product Category Bipolar Transistors - BJT
RoHS
Maximum DC Collector Current 0.1 A
Mounting Style SMD/SMT
Pd - Power Dissipation 225 W
Product Type BJTs - Bipolar Transistors
Package / Case SOT-23-3
Collector- Base Voltage VCBO 20 V
Collector- Emitter Voltage VCEO Max 12 V
Collector-Emitter Saturation Voltage 400 mV
Length 2.9 mm
Width 1.3 mm
Height 0.94 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Gain Bandwidth Product FT 400 MHz
Series BSV52L
Packaging Cut Tape or Reel
Brand ON Semiconductor
Configuration Single
Continuous Collector Current 0.1 A
DC Collector/Base Gain Hfe Min 25
Transistor Polarity NPN
Factory Pack Quantity 3000
Subcategory Transistors
Unit Weight 0.000282 oz
Перекрестные ссылки
750265
1155
/category/Semiconductors/Discrete-Semiconductors/Transistors/Bipolar-Transistors-BJT_1155?proid=750265&N=
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1 0.04716