Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT |
| RoHS |
|
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 225 mW |
| Product Type | BJTs - Bipolar Transistors |
| Package / Case | SOT-23-3 |
| Collector- Base Voltage VCBO | 30 V |
| Collector- Emitter Voltage VCEO Max | 25 V |
| Collector-Emitter Saturation Voltage | 0.5 V |
| Emitter- Base Voltage VEBO | 3 V |
| Length | 2.9 mm |
| Width | 1.3 mm |
| Height | 0.94 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product FT | 650 MHz |
| Series | MMBTH10L |
| Packaging | Cut Tape or Reel |
| Brand | ON Semiconductor |
| Configuration | Single |
| DC Collector/Base Gain Hfe Min | 60 |
| Transistor Polarity | NPN |
| Factory Pack Quantity | 3000 |
| Subcategory | Transistors |
