Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | ON Semiconductor |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 5.7 mOhms |
| Rise Time | 70 ns |
| Fall Time | 60 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 115 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-252-3 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Packaging | Cut Tape or Reel |
| Brand | ON Semiconductor |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Qg - Gate Charge | 82 nC |
| Technology | Si |
| Id - Continuous Drain Current | 98 A |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Typical Turn-Off Delay Time | 35 ns |
| Typical Turn-On Delay Time | 18 ns |
| Factory Pack Quantity | 2500 |
| Subcategory | MOSFETs |
| Unit Weight | 0.139332 oz |
