Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | ON Semiconductor |
| Product Category | MOSFET |
| RoHS |
|
| Type | MOSFET |
| Forward Transconductance - Min | 5.7 S |
| Rds On - Drain-Source Resistance | 120 mOhms |
| Rise Time | 35 ns |
| Fall Time | 27 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 2.1 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | SOT-223-3 |
| Length | 6.5 mm |
| Width | 3.5 mm |
| Height | 1.57 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Channel Mode | Enhancement |
| Series | NTF3055L108 |
| Packaging | Cut Tape or Reel |
| Brand | ON Semiconductor |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 5 V |
| Vgs Th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 7.6 nC |
| Technology | Si |
| Id - Continuous Drain Current | 3 A |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Typical Turn-Off Delay Time | 22 ns |
| Typical Turn-On Delay Time | 11 ns |
| Factory Pack Quantity | 1000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.008818 oz |
