THD4P02FT1G
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THD4P02FT1G , ON Semiconductor

Производитель: ON Semiconductor
Mfr.Part #: NTHD4P02FT1G
Пакет: ChipFET-8
RoHS:
Техническая спецификация:

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Описание:
MOSFET -20V -3A P-Channel w/3A Schottky
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Технические характеристики продукта
Product Attribute Attribute Value
Manufacturer ON Semiconductor
Product Category MOSFET
RoHS
Type MOSFET
Product MOSFET Small Signal
Forward Transconductance - Min 5 S
Rds On - Drain-Source Resistance 200 mOhms
Rise Time 13 ns
Fall Time 13 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 1.1 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case ChipFET-8
Length 3.05 mm
Width 1.65 mm
Height 1.05 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Series NTHD4P02
Packaging Cut Tape or Reel
Brand ON Semiconductor
Configuration Single
Transistor Polarity P-Channel
Transistor Type 1 P-Channel
Vgs - Gate-Source Voltage 12 V
Technology Si
Id - Continuous Drain Current 3 A
Vds - Drain-Source Breakdown Voltage 20 V
Typical Turn-Off Delay Time 33 ns
Typical Turn-On Delay Time 7 ns
Factory Pack Quantity 3000
Subcategory MOSFETs
Unit Weight 0.002998 oz
Перекрестные ссылки
752274
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=752274&N=
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1 0.14069