Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | ON Semiconductor |
| Product Category | MOSFET |
| RoHS |
|
| Type | MOSFET |
| Forward Transconductance - Min | 30 S |
| Rds On - Drain-Source Resistance | 20 mOhms |
| Rise Time | 40 ns, 100 ns |
| Fall Time | 110 ns, 125 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 2.5 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | SOIC-8 |
| Length | 5 mm |
| Width | 4 mm |
| Height | 1.5 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | NTMS10P02 |
| Packaging | Cut Tape or Reel |
| Brand | ON Semiconductor |
| Configuration | Single |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Vgs - Gate-Source Voltage | 2.5 V |
| Vgs Th - Gate-Source Threshold Voltage | 600 mV |
| Qg - Gate Charge | 48 nC |
| Technology | Si |
| Id - Continuous Drain Current | 8.8 A |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Typical Turn-Off Delay Time | 100 ns, 110 ns |
| Typical Turn-On Delay Time | 25 ns |
| Factory Pack Quantity | 2500 |
| Subcategory | MOSFETs |
| Unit Weight | 0.006596 oz |
