Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Osram Opto Semiconductor |
| Product Category | Phototransistors |
| RoHS |
|
| Type | IR Chip |
| Product | Phototransistors |
| Rise Time | 7 us |
| Maximum On-State Collector Current | 50 mA |
| Fall Time | 9 us |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 150 mW |
| Product Type | Phototransistors |
| Lens Color/Style | Black |
| Package / Case | Mini Side Looker |
| Collector- Emitter Voltage VCEO Max | 35 V |
| Collector-Emitter Breakdown Voltage | 35 V |
| Collector-Emitter Saturation Voltage | 140 mV |
| Wavelength | 920 nm |
| Length | 3.1 mm |
| Width | 2.2 mm |
| Height | 4.1 mm |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 85 C |
| Part # Aliases | Q62702P5073 |
| Brand | OSRAM Opto Semiconductors |
| Peak Wavelength | 920 nm |
| Dark Current | 50 nA |
| Half Intensity Angle Degrees | 14 deg |
| Factory Pack Quantity | 2000 |
| Subcategory | Optical Detectors and Sensors |
