Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Osram Opto Semiconductor |
| Product Category | Phototransistors |
| RoHS |
|
| Type | Ambient Light Photo Sensor with Phototransistor Output |
| Product | Phototransistors |
| Rise Time | - |
| Maximum On-State Collector Current | 20 mA |
| Fall Time | - |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | - |
| Product Type | Phototransistors |
| Collector- Emitter Voltage VCEO Max | 5.5 V |
| Collector-Emitter Breakdown Voltage | 5.5 V |
| Collector-Emitter Saturation Voltage | 100 mV |
| Wavelength | 570 nm |
| Length | 2.1 mm |
| Width | 1.35 mm |
| Height | 0.9 mm |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 85 C |
| Moisture Sensitive | Yes |
| Packaging | Cut Tape or Reel |
| Package/Case | SMT |
| Part # Aliases | Q65110A3511 |
| Brand | OSRAM Opto Semiconductors |
| Light Current | 12.5 uA |
| Peak Wavelength | 570 nm |
| Dark Current | 50 nA |
| Half Intensity Angle Degrees | 60 deg |
| Factory Pack Quantity | 3000 |
| Subcategory | Optical Detectors and Sensors |
| Unit Weight | 3,760 mg |
