Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | ROHM Semiconductor |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 1.7 S |
| Rds On - Drain-Source Resistance | 1.2 Ohms |
| Rise Time | 18 ns |
| Fall Time | 35 ns |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 40 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-220FP-3 |
| Packaging | Bulk |
| Part # Aliases | R6006ANX |
| Brand | ROHM Semiconductor |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 30 V |
| Qg - Gate Charge | 15 nC |
| Technology | Si |
| Id - Continuous Drain Current | 6 A |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Typical Turn-Off Delay Time | 50 ns |
| Typical Turn-On Delay Time | 22 ns |
| Factory Pack Quantity | 500 |
| Subcategory | MOSFETs |
| Unit Weight | 0.211644 oz |
