Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | ROHM Semiconductor |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 130 mOhms |
| Rise Time | 20 ns |
| Fall Time | 75 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 85 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-252-3 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | RCD100N19 |
| Packaging | Cut Tape or Reel |
| Part # Aliases | RCD100N19 |
| Brand | ROHM Semiconductor |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs Th - Gate-Source Threshold Voltage | 500 mV |
| Qg - Gate Charge | 52 nC |
| Technology | Si |
| Id - Continuous Drain Current | 10 A |
| Vds - Drain-Source Breakdown Voltage | 190 V |
| Typical Turn-Off Delay Time | 140 ns |
| Typical Turn-On Delay Time | 15 ns |
| Factory Pack Quantity | 2500 |
| Subcategory | MOSFETs |
| Unit Weight | 0.011993 oz |
