SE100150G
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SE100150G , SINO-IC

Производитель: SINO-IC
Mfr.Part #: SE100150G
Пакет: TO-263-2
RoHS:
Техническая спецификация:

PDF For SE100150G

ECAD:
Описание:
MOSFET N Trench 100V 150A 4V @ 250uA 3.81 mΩ @ 100A,10V TO-263-2 RoHS
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  • Количество Цена за единицу
  • 1+ $0.90513
  • 10+ $0.76410
  • 30+ $0.68760
  • 100+ $0.60030
  • 500+ $0.56133
  • 800+ $0.54387

In Stock: 16

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Количество Минимум 1
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$0.90513

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Технические характеристики продукта
Product Attribute Attribute Value
Manufacturer SINO-IC
Continuous Drain Current (Id) @ 25°C 150A
Power Dissipation-Max (Ta=25°C) 300W(Tc)
Rds On - Drain-Source Resistance 3.81mΩ @ 100A,10V
Package / Case TO-263-2
Packaging -
Transistor Polarity N Channel
Vgs - Gate-Source Voltage 4V @ 250uA
Vds - Drain-Source Breakdown Voltage 100V
Перекрестные ссылки
4644170
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4644170&N=
$
1 0.90513
10 0.76410
30 0.68760
100 0.60030
500 0.56133
800 0.54387