Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 4 mOhms |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 110 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-263-3 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Qualification | AEC-Q101 |
| Series | STB120N4F6 |
| Packaging | Cut Tape or Reel |
| Brand | STMicroelectronics |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs Th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 65 nC |
| Technology | Si |
| Id - Continuous Drain Current | 80 A |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Factory Pack Quantity | 1000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.139332 oz |
| Tradename | STripFET |
