Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Product Category | IGBT Transistors |
| RoHS |
|
| Maximum Gate Emitter Voltage | 20 V |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 25 W |
| Product Type | IGBT Transistors |
| Package / Case | TO-220-3 FP |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Collector-Emitter Saturation Voltage | 2.8 V |
| Length | 10.4 mm |
| Width | 4.6 mm |
| Height | 9.3 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Series | STGF3NC120HD |
| Packaging | Tube |
| Brand | STMicroelectronics |
| Configuration | Single |
| Continuous Collector Current | 3 A |
| Continuous Collector Current At 25 C | 6 A |
| Continuous Collector Current Ic Max | 6 A |
| Gate-Emitter Leakage Current | +/- 100 nA |
| Technology | Si |
| Factory Pack Quantity | 1000 |
| Subcategory | IGBTs |
