Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Product Category | IGBT Transistors |
| RoHS |
|
| Maximum Gate Emitter Voltage | 20 V |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 200 W |
| Product Type | IGBT Transistors |
| Package / Case | TO-247-3 |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Collector-Emitter Saturation Voltage | 2.1 V |
| Length | 15.75 mm |
| Width | 5.15 mm |
| Height | 20.15 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Series | STGW30NC60WD |
| Packaging | Tube |
| Brand | STMicroelectronics |
| Configuration | Single |
| Continuous Collector Current | 30 A |
| Continuous Collector Current Ic Max | 60 A |
| Gate-Emitter Leakage Current | 100 nA |
| Technology | Si |
| Factory Pack Quantity | 600 |
| Subcategory | IGBTs |
| Unit Weight | 1.340411 oz |
