Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Product Category | MOSFET |
| RoHS |
|
| Type | Power MOSFET |
| Forward Transconductance - Min | 4 S |
| Rds On - Drain-Source Resistance | 200 mOhms |
| Rise Time | 60 ns, 400 ns |
| Fall Time | 40 ns, 1100 ns |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 31 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Channel Mode | Enhancement |
| Qualification | AEC-Q101 |
| Series | VNP5N07 |
| Packaging | Tube |
| Brand | STMicroelectronics |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel OMNIFET Power MOSFET |
| Vgs Th - Gate-Source Threshold Voltage | 800 mV |
| Qg - Gate Charge | 18 nC |
| Technology | Si |
| Id - Continuous Drain Current | 5 A |
| Typical Turn-Off Delay Time | 150 ns, 3900 ns |
| Typical Turn-On Delay Time | 50 ns, 150 ns |
| Factory Pack Quantity | 1000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.011640 oz |
