Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 17.4 mOhms |
| Rise Time | 8.4 ns |
| Fall Time | 38 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 1.5 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | DSBGA-9 |
| Length | 1.5 mm |
| Width | 1.5 mm |
| Height | 0.62 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | CSD22202W15 |
| Packaging | Cut Tape or Reel |
| Brand | Texas Instruments |
| Configuration | Single |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Vgs - Gate-Source Voltage | 6 V |
| Vgs Th - Gate-Source Threshold Voltage | 800 mV |
| Qg - Gate Charge | 6.5 nC |
| Technology | Si |
| Id - Continuous Drain Current | 5 A |
| Vds - Drain-Source Breakdown Voltage | 8 V |
| Typical Turn-Off Delay Time | 109 ns |
| Typical Turn-On Delay Time | 10.4 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.000088 oz |
| Tradename | NexFET |
