Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Texas Instruments |
| Product Category | Gate Drivers |
| RoHS |
|
| Type | High Side, Low Side |
| Product | MOSFET Gate Drivers |
| Rds On - Drain-Source Resistance | 400 mOhms |
| Rise Time | 0.5 ns |
| Maximum Turn-Off Delay Time | 18 ns |
| Maximum Turn-On Delay Time | 18 ns |
| Fall Time | 0.5 ns |
| Operating Temperature Range | - 40 C to + 125 C |
| Off Time - Max | 18 ns |
| Mounting Style | SMD/SMT |
| Number Of Outputs | 2 Output |
| Product Type | Gate Drivers |
| Package / Case | WQFN-19 |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 125 C |
| Supply Voltage - Min | 4.75 V |
| Supply Voltage - Max | 18 V |
| Operating Supply Current | 380 uA |
| Logic Type | TTL |
| Number Of Drivers | 2 Driver |
| Propagation Delay - Max | 20 ns |
| Output Current | 3 A |
| Output Voltage | 5 V |
| Moisture Sensitive | Yes |
| Series | LMG1210 |
| Packaging | Cut Tape or Reel |
| Brand | Texas Instruments |
| Technology | GaN |
| Factory Pack Quantity | 3000 |
| Subcategory | PMIC - Power Management ICs |
