2SA1941-O(Q)
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2SA1941-O(Q) , Toshiba

Производитель: Toshiba
Mfr.Part #: 2SA1941-O(Q)
Пакет:
RoHS:
Техническая спецификация:

PDF For 2SA1941-O(Q)

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Bipolar Transistors - BJT PNP VCEO -140V 70-W DC -10A 100W
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  • Количество Цена за единицу
  • 20+ $0.52194
  • 50+ $0.41732
  • 500+ $0.37990

In Stock: 1324

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Количество Минимум 20
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Total

$10.4388

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Технические характеристики продукта
Product Attribute Attribute Value
Manufacturer Toshiba
Product Category Bipolar Transistors - BJT
RoHS
Mounting Style Through Hole
Pd - Power Dissipation 100 W
Product Type BJTs - Bipolar Transistors
Collector- Base Voltage VCBO - 140 V
Collector- Emitter Voltage VCEO Max - 140 V
Collector-Emitter Saturation Voltage 2 V
Emitter- Base Voltage VEBO - 5 V
Maximum Operating Temperature + 150 C
Gain Bandwidth Product FT 30 MHz
Brand Toshiba
Configuration Single
Continuous Collector Current 10 A
DC Collector/Base Gain Hfe Min 35
DC Current Gain HFE Max 83
Transistor Polarity PNP
Technology Si
Factory Pack Quantity 4000
Subcategory Transistors
Unit Weight 0.165788 oz
Перекрестные ссылки
764879
1155
/category/Semiconductors/Discrete-Semiconductors/Transistors/Bipolar-Transistors-BJT_1155?proid=764879&N=
$
20 0.52194
50 0.41732
500 0.37990