Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Toshiba |
| Product Category | Bipolar Transistors - BJT |
| RoHS |
|
| Maximum DC Collector Current | 100 mA |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 150 mW |
| Product Type | BJTs - Bipolar Transistors |
| Package / Case | SOT-346-3 |
| Collector- Base Voltage VCBO | 120 V |
| Collector- Emitter Voltage VCEO Max | 120 V |
| Collector-Emitter Saturation Voltage | 0.3 V |
| Emitter- Base Voltage VEBO | 5 V |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 125 C |
| Gain Bandwidth Product FT | 100 MHz |
| Series | 2SC3324 |
| Packaging | Cut Tape or Reel |
| Brand | Toshiba |
| Configuration | Single |
| Continuous Collector Current | 100 mA |
| DC Collector/Base Gain Hfe Min | 200 |
| DC Current Gain HFE Max | 700 |
| Transistor Polarity | NPN |
| Factory Pack Quantity | 3000 |
| Subcategory | Transistors |
| Unit Weight | 0.000423 oz |
