Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | UnitedSiC |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 100 mOhms |
| Rise Time | 13 ns |
| Fall Time | 11 ns |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 190 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Channel Mode | Enhancement |
| Qualification | AEC-Q101 |
| Series | UJ3C |
| Packaging | Tube |
| Brand | UnitedSiC |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | 25 V |
| Vgs Th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 51 nC |
| Technology | SiC |
| Id - Continuous Drain Current | 31 A |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Typical Turn-Off Delay Time | 59 ns |
| Typical Turn-On Delay Time | 18 ns |
| Factory Pack Quantity | 50 |
| Subcategory | MOSFETs |
