SI1021R-T1-GE3
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SI1021R-T1-GE3 , Vishay Intertech

Производитель: Vishay Intertech
Mfr.Part #: SI1021R-T1-GE3
Пакет:
RoHS:
Техническая спецификация:

PDF For SI1021R-T1-GE3

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Описание:
MOSFET P Channel 60V 190mA 3V @ 250uA 4Ω @ 500mA,10V SC-75A RoHS
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  • Количество Цена за единицу
  • 1+ $0.30222
  • 10+ $0.24039
  • 30+ $0.21357
  • 100+ $0.18135
  • 500+ $0.16659
  • 1000+ $0.15714

In Stock: 1805

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Количество Минимум 1
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Total

$0.30222

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Технические характеристики продукта
Product Attribute Attribute Value
Continuous Drain Current (Id) @ 25°C 190mA
Power Dissipation-Max (Ta=25°C) 250mW
Rds On - Drain-Source Resistance 4Ω @ 500mA,10V
Transistor Polarity P Channel
Vgs - Gate-Source Voltage 3V @ 250uA
Vds - Drain-Source Breakdown Voltage 60V
Перекрестные ссылки
5134345
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=5134345&N=
$
1 0.30222
10 0.24039
30 0.21357
100 0.18135
500 0.16659
1000 0.15714