SI2303CDS-T1-GE3
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SI2303CDS-T1-GE3 , Vishay Intertech

Производитель: Vishay Intertech
Mfr.Part #: SI2303CDS-T1-GE3
Пакет: SOT-23(SOT-23-3)
RoHS:
Техническая спецификация:

PDF For SI2303CDS-T1-GE3

ECAD:
Описание:
MOSFET P Trench 30V 2.7A 3V @ 250uA 190 mΩ @ 1.9A,10V SOT-23(SOT-23-3) RoHS
Tips: the prices and stock are available, please place order directly.
  • Количество Цена за единицу
  • 5+ $0.08280
  • 50+ $0.06696
  • 150+ $0.05913
  • 500+ $0.05319
  • 3000+ $0.04581
  • 6000+ $0.04347

In Stock: 8960

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Количество Минимум 5
КУПИТЬ
Total

$0.414

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Технические характеристики продукта
Product Attribute Attribute Value
Manufacturer Vishay Intertech
Continuous Drain Current (Id) @ 25°C 2.7A
Power Dissipation-Max (Ta=25°C) 1W
Rds On - Drain-Source Resistance 190mΩ @ 1.9A,10V
Package / Case SOT-23(SOT-23-3)
Packaging Tape & Reel (TR)
Transistor Polarity P Channel
Vgs - Gate-Source Voltage 3V @ 250uA
Vds - Drain-Source Breakdown Voltage 30V
Перекрестные ссылки
4581790
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4581790&N=
$
5 0.08280
50 0.06696
150 0.05913
500 0.05319
3000 0.04581
6000 0.04347