SI2333DDS-T1-GE3
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SI2333DDS-T1-GE3 , Vishay Intertech

Производитель: Vishay Intertech
Mfr.Part #: SI2333DDS-T1-GE3
Пакет: SOT-23(SOT-23-3)
RoHS:
Техническая спецификация:

PDF For SI2333DDS-T1-GE3

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Описание:
MOSFET P Trench 12V 6A(Tc) 1V @ 250uA 28 mΩ @ 5A,4.5V SOT-23(SOT-23-3) RoHS
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Технические характеристики продукта
Product Attribute Attribute Value
Manufacturer Vishay Intertech
Continuous Drain Current (Id) @ 25°C 6A(Tc)
Power Dissipation-Max (Ta=25°C) 1.7W(Tc)
Rds On - Drain-Source Resistance 28mΩ @ 5A,4.5V
Package / Case SOT-23(SOT-23-3)
Packaging Tape & Reel (TR)
Transistor Polarity P Channel
Vgs - Gate-Source Voltage 1V @ 250uA
Vds - Drain-Source Breakdown Voltage 12V
Перекрестные ссылки
4632234
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4632234&N=
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1 0.13787