SQM120P06-07L_GE3
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SQM120P06-07L_GE3 , Vishay Intertech

Производитель: Vishay Intertech
Mfr.Part #: SQM120P06-07L_GE3
Пакет: TO-263-2
RoHS:
Техническая спецификация:

PDF For SQM120P06-07L_GE3

ECAD:
Описание:
MOSFET P Trench 60V 120A(Tc) 2.5V @ 250uA 6.7 mΩ @ 30A,10V TO-263-2 RoHS
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Технические характеристики продукта
Product Attribute Attribute Value
Manufacturer Vishay Intertech
Continuous Drain Current (Id) @ 25°C 120A(Tc)
Power Dissipation-Max (Ta=25°C) 375W(Tc)
Rds On - Drain-Source Resistance 6.7mΩ @ 30A,10V
Package / Case TO-263-2
Packaging -
Transistor Polarity P Channel
Vgs - Gate-Source Voltage 2.5V @ 250uA
Vds - Drain-Source Breakdown Voltage 60V
Перекрестные ссылки
4639871
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4639871&N=
$
1 1.76161