Si2308BDS-T1-GE3
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Si2308BDS-T1-GE3 , Vishay Intertech

Производитель: Vishay Intertech
Mfr.Part #: Si2308BDS-T1-GE3
Пакет: SOT-23-3
RoHS:
Техническая спецификация:

PDF For Si2308BDS-T1-GE3

ECAD:
Описание:
MOSFET N Trench 60V 2.3A 3V @ 250uA 156 mΩ @ 1.9A,10V SOT-23-3 RoHS
Tips: the prices and stock are available, please place order directly.
  • Количество Цена за единицу
  • 10+ $0.14708
  • 50+ $0.13542
  • 200+ $0.12571
  • 600+ $0.11599
  • 1500+ $0.10822
  • 3000+ $0.10337

In Stock: 1091

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Количество Минимум 10
КУПИТЬ
Total

$1.4708

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Технические характеристики продукта
Product Attribute Attribute Value
Manufacturer Vishay Intertech
Continuous Drain Current (Id) @ 25°C 2.3A
Power Dissipation-Max (Ta=25°C) 1W
Rds On - Drain-Source Resistance 156mΩ @ 1.9A,10V
Package / Case SOT-23-3
Packaging Tape & Reel (TR)
Transistor Polarity N Channel
Vgs - Gate-Source Voltage 3V @ 250uA
Vds - Drain-Source Breakdown Voltage 60V
Перекрестные ссылки
4582481
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4582481&N=
$
10 0.14708
50 0.13542
200 0.12571
600 0.11599
1500 0.10822
3000 0.10337